Recently, Vishay Intertechnology, Inc. announced that it has introduced the new 600V, 47A N-channel power MOSFET -- SiHG47N60S. This MOSFET has an ultra-low maximum on-resistance of 0.07Ω with a gate drive of 10V, and the gate charge is reduced to 216nC. , in TO-247 package.
The product of gate charge and on-resistance is the figure of merit (FOM) of the MOSFET used in power conversion applications. The FOM of the SiHG47N60S is 15.12Ω-nC, which is the lowest of the class in the industry.
The low on-resistance of the SiHG47N60S means lower conduction losses, resulting in inverter circuits and pulse width modulation (PWM) full bridges in inverter, communication, server and motor control power applications for solar cells and wind turbines. Save energy in the topology.
The new SiHG47N60S is manufactured using Vishay Super Junction technology, a targeted process for reducing on-state resistance, withstanding high-energy pulses in avalanche and communication modes. The MOSFET complies with the RoHS Directive 2002/95/EC and has undergone a complete avalanche test to ensure reliable operation.
Samples of the new power MOSFETs are available now and are in volume production, with lead times of 10 to 12 weeks for larger orders.
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